Semiconductor device

Abstract

A semiconductor device includes a substrate; a gate structure, located over the substrate, the gate structure including a first gate oxide layer, a second gate oxide layer, and a silicon layer. The first gate oxide layer is over the substrate, and the first gate oxide layer has a sloped sidewall on one side and a vertical sidewall on another side. The second gate oxide layer is over the substrate and on the sloped sidewall of the first gate oxide layer, and a thickness of the second gate oxide layer is less than a thickness of the first gate oxide layer. The silicon layer is formed over the first gate oxide layer and the second gate oxide layer.

Dependencies are inferred from the claim text.