Semiconductor Device With L-Shape Conductive Feature And Methods Of Forming The Same

A method of forming a semiconductor device, comprising:

• forming a semiconductor fin over a substrate;
• forming a metal gate structure over a channel region of the semiconductor fin;
• forming a first interlayer dielectric (ILD) layer over a source/drain (S/D) region next to the channel region of the semiconductor fin;
• forming a conductive feature on the metal gate structure and the first ILD layer;
• removing a top corner portion of the conductive feature to form an L-shape conductive feature, wherein the top corner portion is over at least a portion of the metal gate structure;
• and
• filling the top corner portion of the L-shape conductive feature with a first dielectric feature.

A method of forming a semiconductor device, comprising:

• forming a semiconductor fin over a substrate;
• forming a metal gate structure over a channel region of the semiconductor fin;
• forming a first interlayer dielectric (ILD) layer over a first source/drain (S/D) region next to the channel region of the semiconductor fin;
• forming a first conductive feature over the metal gate structure and the first ILD layer, wherein the first conductive feature includes a first conductive portion disposed on the metal gate structure and a second conductive portion disposed on the first ILD layer, wherein a top surface of the first conductive portion is below a top surface of the second conductive portion, a first sidewall of the first conductive portion contacts a lower portion of a first sidewall of the second conductive portion;
• and
• forming a dielectric feature on a top surface of the first conductive portion of the first conductive feature.