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US 2022/0028739 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeKioxia Corporation
InventorsSatoshi WAKATSUKI, Tomohisa IINO, Naomi FUKUMAKI, Misuzu SATO, Masakatsu TAKEUCHI
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Abstract
A semiconductor device according to an embodiment includes: a barrier metal layer provided on a surface of an insulating layer; and a conductive layer having a first metal layer provided on a surface of the barrier metal layer, and a second metal layer provided on a surface of the first metal layer. The second metal layer includes an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.
Claims6
A manufacturing method of a semiconductor device, comprising:
- forming a barrier metal layer on a surface of an insulating layer;
- forming a first metal layer on a surface of the barrier metal layer;
- and
- forming, on a surface of the first metal layer, a second metal layer including an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.
1 more element
Dependencies are inferred from the claim text.