Process for preparing epitaxy wafer and epitaxy wafer therefrom

Abstract

The present application provides a process for preparing an epitaxy wafer, and an epitaxy wafer prepared therefrom. The process comprises: step S1: providing a semiconductor substrate wafer, conducting an epitaxy process and forming an epitaxy layer on the wafer; and step S2: conducting a thermal treatment to the wafer to eliminate the haze pattern of the epitaxy layer. According to the process, the thermal treatment after the epitaxy process can facilitate the orientation of atoms on the wafer surface toward the lowest energy orientation, so that the atoms of the epitaxy layer arrange and accumulate uniformly. Therefore, the haze pattern on the wafer surface can be eliminated.

Dependencies are inferred from the claim text.