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AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsHeimanu NIEBOJEWSKI, François ANDRIEU, Claire FENOUILLET-BERANGER
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The invention relates to a method for manufacturing a microelectronic device from a semiconductor-on-insulator substrate, said device comprising active components (23) formed in active areas of the substrate (10) separated by isolation trenches and which are delimited by first sidewalls (19B), said isolation trenches being filled, at least partially, with a first dielectric material, the method comprising: a step of chemically attacking a passive section (21) of the first bottom of the isolation trenches intended to generate, at said section, a roughness quadratic mean comprised between 2 nm and 6 nm, a step of forming a passive component (27), covering the first dielectric material and directly above the passive section (21).
A method for manufacturing a microelectronic device comprising:
A microelectronic device comprising a support substrate having a main face, and islands resting on the main face, each of the islands comprising a stack , the stack being provided, in this order and starting from the main face, with a dielectric layer and with a semiconductor layer, the islands being laterally delimited by sidewalls, called first sidewalls, and being separated from one another by isolation trenches which extend over at least the entirety of the thickness of the stack up to a first bottom formed on or in the support substrate, the device comprising a passive section on the first bottom of the isolation trenches which has a roughness quadratic mean comprised between 2 nm and 6 nm, and
Dependencies are inferred from the claim text.