Memory including a plurality of portions and used for reducing program disturbance and program method thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsYali Song, XiangNan Zhao, Ying Cui
Life of this patent
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AssigneeYangtze Memory Technologies Co., Ltd.
InventorsYali Song, XiangNan Zhao, Ying Cui
Estimating the term…
A memory includes a first deck including a first set of word lines, a second deck above the first deck and including a second set of word lines, and a controller. The controller is configured to apply a program voltage to a first target word line of the first set of word lines in the first deck, and apply a first pass voltage to at least one of the first set of word lines that is below the first target word line when applying the program voltage to the first target word line. The controller is also configured to apply the program voltage to a second target word line of the second set of word lines in the second deck, and apply a second pass voltage to at least one of the second set of word lines that is below the second target word line when applying the program voltage to the second target word line. The second pass voltage is greater than the first pass voltage.
A memory device, comprising:
A method for operating a memory device comprising a first deck comprising a first set of word lines, and a second deck above the first deck and comprising a second set of word lines, the method comprising:
Dependencies are inferred from the claim text.