Resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorJun Hatakeyama
Life of this patent
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Abstract
A resist composition comprising an ammonium salt and fluorine-containing polymer offers a high sensitivity and is unsusceptible to nano-bridging, pattern collapse or residue formation, independent of whether it is of positive or negative tone. The ammonium salt and fluorine-containing polymer comprises repeat units AU having an ammonium salt structure containing a carboxylic acid anion, sulfonamide anion, phenoxide anion or enolate anion of β-diketone, the anion containing fluorine, but not iodine and bromine, and repeat units FU-1 having a trifluoromethylalcohol group and/or repeat units FU-2 having a fluorinated hydrocarbyl group.
Claims14
A resist composition comprising
- an ammonium salt and fluorine-containing polymer comprising repeat units AU having an ammonium salt structure containing a carboxylic acid anion containing fluorine, but not iodine and bromine, a sulfonamide anion containing fluorine, but not iodine and bromine, a phenoxide anion containing fluorine, but not iodine and bromine, or an enolate anion of β-diketone containing fluorine, but not iodine and bromine, and repeat units of at least one type selected from repeat units FU-1 having a trifluoromethylalcohol group which may be substituted with an acid labile group and repeat units FU-2 having a fluorinated hydrocarbyl group, and
- a base polymer.
Dependencies are inferred from the claim text.