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US 2022/0026795 A1Published application
Pellicle for an euv lithography mask and a method of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYun-Yue LIN
Life of this patent
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Abstract
A pellicle for an EUV photo mask includes a base membrane layer, a core layer disposed over the base membrane layer and one or more metallic layers disposed over the core layer.
Claims20
A method of manufacturing a pellicle for an extreme ultraviolet (EUV) photo mask, the method comprising:
- forming a base membrane layer over a front surface of a substrate;
- forming a core layer over the base membrane layer;
- forming a cover layer over the core layer;
- forming a first protection layer over the cover layer;
- forming a second protection layer over the first protection layer;
- forming a hard mask layer on a back surface of the substrate;
- forming a first opening in the hard mask by patterning the hard mask;
- removing the second protection layer;
- forming a third protection layer over the first protection layer;
- forming a second opening in the substrate by etching the substrate through the first opening;
- removing the third protection layer and the first protection layer;
- and
- forming one or more metallic layers over the cover layer.
10 more elements
A method of manufacturing a pellicle for an EUV photo mask, the method comprising:
- forming a base membrane layer over a front surface of a substrate;
- forming a core layer over the base membrane layer;
- forming a cover layer over the core layer;
- forming a first metallic layer over the cover layer;
- forming a second metallic layer over the first metallic layer;
- forming a first protection layer over the second metallic layer;
- forming a second protection layer over the first protection layer;
- forming a hard mask layer on a back surface of the substrate;
- forming a first opening in the hard mask by patterning the hard mask;
- removing the second protection layer;
- forming a third protection layer over the first protection layer;
- forming a second opening in the substrate by etching the substrate through the first opening;
- and
- removing the third protection layer and the first protection layer.
11 more elements
A method of manufacturing a pellicle for an EUV photo mask, the method comprising:
- forming a base membrane layer over a front surface of a substrate;
- forming a first metallic layer in contact with the base membrane layer;
- forming a second metallic layer on the second metallic layer;
- forming a first protection layer over the second metallic layer;
- forming a second protection layer over the first protection layer;
- forming a hard mask layer on a back surface of the substrate;
- forming a first opening in the hard mask by patterning the hard mask;
- removing the second protection layer;
- forming a third protection layer over the first protection layer;
- forming a second opening in the substrate by etching the substrate through the first opening;
- and
- removing the third protection layer and the first protection layer.
9 more elements
Dependencies are inferred from the claim text.