Multilevel semiconductor device and structure with electromagnetic modulators
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Deepak C. Sekar, Brian Cronquist
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Abstract
A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the first level includes crystalline silicon; an oxide layer disposed between the first level and the second level; and a plurality of electromagnetic modulators, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.
Claims20
A multi-level semiconductor device, the device comprising:
- a first level comprising integrated circuits;
- a second level comprising a structure designed to conduct electromagnetic waves,
- wherein said second level is disposed above said first level,
- wherein said first level comprises crystalline silicon;
- an oxide layer disposed between said first level and said second level;
- and
- a plurality of electromagnetic modulators,
- wherein said second level is bonded to said oxide layer, and
- wherein said bonded comprises oxide to oxide bonds.
A multi-level semiconductor device, the device comprising:
- a first level comprising a structure designed to conduct electromagnetic waves;
- a second level comprising integrated circuits,
- wherein said second level is disposed above said first level;
- a plurality of electromagnetic modulators;
- and
- an oxide layer disposed between said first level and said second level,
- wherein said second level is bonded to said oxide layer, and
- wherein said bonded comprises oxide to oxide bonds.
A multi-level semiconductor device, the device comprising:
- a first level comprising integrated circuits and electromagnetic modulators;
- a second level comprising a plurality of interconnects lines,
- wherein said second level is disposed above said first level,
- wherein said first level comprises crystalline silicon;
- and
- an oxide layer disposed between said first level and said second level,
- wherein said second level is bonded to said first level, and
- wherein said bonded comprises oxide to oxide bonds.
Dependencies are inferred from the claim text.