Apparatus and method for performing sputtering process
AssigneeTokyo Electron Limited
InventorsMasato SHINADA, Einstein Noel ABARRA, Hiroyuki TOSHIMA, Shota ISHIBASHI
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AssigneeTokyo Electron Limited
InventorsMasato SHINADA, Einstein Noel ABARRA, Hiroyuki TOSHIMA, Shota ISHIBASHI
Estimating the term…
An apparatus for performing a sputtering process on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed, a target for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber, a magnet, provided on a rear surface of the target, for adjusting a state of the plasma on the surface of the target, and a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a center portion on the rear surface of the target. The apparatus further includes a collimator having two regulating plates for limiting an incident angle of the target particles to the substrate, and an arrangement position adjustment mechanism adjusting positions of the two regulating plates according to the movement of the magnet.
An apparatus for performing a sputtering process on a substrate, the apparatus comprising:
A method for performing a sputtering process on a substrate, the method comprising:
Dependencies are inferred from the claim text.