Quantum-Dot Light Emitting Diode and Packaging Method Thereof

Abstract

A quantum-dot light emitting diode includes, in sequential order from bottom to top, a LED light source, a quantum-dot photoresist layer and a barrier layer. The quantum-dot photoresist layer has a thickness lower than 20 μm and is formed by specific material, so as to decrease a step difference between the quantum-dot photoresist layer and a light exit surface of the LED light source, to improve coating property of the barrier material and make sure that the coating of the barrier material can be implemented by dry coating or wet coating; the barrier material is not easy to crack to cause air leakage and oxidation because of thermal expansion and contraction, so as to increase the success rate of side packaging and the reliability of the process, and extend the reliability of the material.

Dependencies are inferred from the claim text.