Raw material for forming thin film by atomic layer deposition method, method of producing thin film, and alkoxide compound
AssigneeAdeka Corporation
InventorsAtsushi SAKURAI, Masako HATASE, Tomoharu YOSHINO, Akihiro NISHIDA, Atsushi YAMASHITA
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Abstract
Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.
Claims3
A thin-film forming raw material, which is used in an atomic layer deposition method, comprising an alkoxide compound represented by the following general formula (1):
- where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.
An alkoxide compound represented by the following general formula (2):
- where R4 to R6 each independently represent an alkyl group having 1 to 5 carbon atoms, provided that the total number of carbon atoms of R4 to R6 is from 4 to 8, and z2 represents an integer of from 1 to 3.
Dependencies are inferred from the claim text.