Optoelectronic semiconductor component having a current distribution layer and method for producing the optoelectronic semiconductor component

A method for producing an optoelectronic semiconductor component, comprising:

• forming a first semiconductor layer of a p-conductivity type,
• thereafter, forming a second semiconductor layer of an n-conductivity type, wherein the first semiconductor layer and the second semiconductor layer are formed over a growth substrate,
• forming an n-doped current spreading layer which contains ZnSe and is directly adjacent to the second semiconductor layer, thereby obtaining a workpiece, and
• rebonding the workpiece onto a transparent substrate, so that the transparent substrate is arranged on a side of the current spreading layer facing away from the second semiconductor layer.

A method for producing an optoelectronic semiconductor component, comprising:

• forming a second semiconductor layer of an n-conductivity type over a growth substrate,
• thereafter, forming a first semiconductor layer of a p-conductivity type, thereby obtaining a workpiece,
• rebonding the workpiece onto a working substrate, so that the first semiconductor layer is arranged on the side of the working substrate,
• thereafter, forming an n-doped current spreading layer which contains ZnSe and is directly adjacent to the second semiconductor layer, and
• rebonding the workpiece onto a transparent substrate after forming the current spreading layer so that the transparent substrate is arranged on a side of the current spreading layer facing away from the second semiconductor layer.