US 2022/0020942 A1Published application

Enhanced Infrared Photodiodes Based on PbS/PbClx Core/Shell Nanocrystals

AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy

InventorsAdam E. Colbert, Diogenes Placencia, Janice E. Boercker, Edward E. Aifer, Joseph G. Tischler, Erin L. Ratcliff

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Abstract

Photodiodes configured to convert incident photons in the short-wave infrared (SWIR) to electric current, where the photodiodes have a PbS/PbClx core/shell nanocrystal absorber layer. The PbClx shell in the PbS/PbClx nanocrystals provide native passivation in the (100) crystal facets and enable removal of native ligands and ligand exchange on the (111) crystal facets of the PbS/PbClx nanocrystals such that the photodiode exhibits reduced current densities under reverse bias and greater infrared photoresponse, providing improved device performance as compared to photodiodes having absorber layers formed from PbS core nanocrystals alone.

Claims6

Dependent claims

A short-wave infrared (SWIR) photodiode, comprising:

at least one absorber layer comprising a plurality of PbS/PbClx core/shell nanocrystals;
wherein the PbS/PbClx core/shell nanocrystals exhibit native PbClx passivation on the (100) crystal plane surfaces of the PbS/PbClx core/shell nanocrystals and further exhibit an exchange of native ligands with halide ligands on the (111) crystal plane surface of the PbS/PbClx core/shell nanocrystals;
wherein a presence of the passivated (100) crystal plane surfaces and the ligand-exchanged (111) crystal plane surface are necessary for diode-rectification and increase the photodiode's conversion of incident photons in the SWIR spectral range to electric current by mitigating losses due to nanocrystal surface defects.

Dependencies are inferred from the claim text.

Facts

Application: 17/375,050Filed 14 Jul 2021
Priority: 17 Jul 2020
Published: 20 Jan 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10K 30/35
Comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains: comprising inorganic nanostructures, e.g.…
H01G 9/2031
Comprising an oxide semiconductor electrode: comprising titanium oxide, e.g. TiO2
H10F 77/127
Active materials: comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
H10F 77/1433
Comprising quantum structures: quantum dots

Family

Application63/052,988Us provisional application · filed 17 Jul 2020
US 2022/0020942 A1This patent

From the US filing history. Foreign family members aren’t listed.

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