Integrated circuit and method for manufacturing the same

A magnetoresistive random-access memory (MRAM) device, comprising:

• a dielectric layer over a substrate;
• a plurality of magnetic tunnel junction (MTJ) stack pillars over the dielectric layer, wherein the MTJ stack pillars comprise at least one conductive material;
• a plurality of spacers over the dielectric layer and partially covering the MTJ stack pillars, respectively, wherein the spacers are disconnected from each other, and the spacers cover a first area of the dielectric layer and expose a second area of the dielectric layer;
• and
• a plurality of first conductive particles between the first area of the dielectric layer and the spacers, wherein the first conductive particles comprise the at least one conductive material.

A method of fabricating a magnetoresistive random-access memory (MRAM) device, comprising:

• providing a dielectric layer over a substrate;
• forming a magnetic tunnel junction (MTJ) stack over the dielectric layer, wherein the MTJ stack comprises at least one conductive material;
• patterning the MTJ stack to form a plurality of MTJ stack pillars and expose the dielectric layer with a plurality of conductive particles disposed on the dielectric layer;
• forming a spacer layer over the dielectric layer and the MTJ stack pillars to adhere to the conductive particles;
• and
• cutting off the spacer layer to remove a part of the spacer layer along with the conductive particles to form a plurality of spacers.