Semiconductor device, and method for manufacturing semiconductor device

A semiconductor device comprising:

• a first semiconductor substrate in which a semiconductor device is disposed, the semiconductor device in the first semiconductor substrate including:
• a first semiconductor region in which a source region, a channel formation region, and a drain region that are of the same conductivity type are provided;
• a gate electrode disposed adjacent to the channel formation region via an insulating film disposed on a surface of the first semiconductor region;
• and a second semiconductor region that is disposed adjacent to the channel formation region on a different surface from a surface on which the gate electrode is disposed, and forms a depletion layer in the channel formation region;
• and
• a second semiconductor substrate on which the first semiconductor substrate is stacked.

A method for manufacturing a semiconductor device,

• the method comprising:
• a step of forming a first semiconductor region in which a source region, a channel formation region, and a drain region that are of the same conductivity type are provided;
• a step of forming a gate electrode disposed adjacent to the channel formation region via an insulating film formed on a surface of the first semiconductor region;
• and
• a step of forming a second semiconductor region that is disposed adjacent to the channel formation region on a different surface from a surface on which the gate electrode is disposed, and forms a depletion layer in the channel formation region.