Fet device insensitive to noise from drive path

A FET device, comprising:

• a substrate of a first conductivity type;
• a first drain region of a second conductivity type;
• a first drain contactor, positioned above the substrate and contacted with the first drain region, the first drain contactor is connected to a drain terminal of the FET device;
• a second drain region of the second conductivity type;
• a second drain contactor, positioned above the substrate and contacted with the second drain region, the second drain contactor is connected to a first gate terminal of the FET device;
• a source region of the second conductivity type, the source region is between the first drain region and the second drain region;
• a source contactor, positioned above the substrate and contacted with the source region, the source contactor is connected to a source terminal of the FET device;
• a first gate region, positioned between the source region and the first drain region, and the first gate region is connected to the first gate terminal of the FET device;
• and
• a second gate region, positioned between the source region and the second drain region, and the second gate region is connected to a second gate terminal of the FET device.

A method for forming a FET device, comprising:

• forming a substrate;
• forming a body region, a first drift region and a second drift region in the substrate;
• forming a first drain region in the first drift region, forming a second drain region in the second drift region, and forming a source region in the body region;
• forming a source contactor positioned above the substrate and contacted with the source region, forming a first drain contactor above the substrate and contacted with the first drain region, and forming a second drain contactor above the substrate and contacted with the second drain region;
• forming a first gate region between the first drain region and the source region, and forming a second gate region between the second drain region and the source region;
• and
• forming a drain terminal connected to the first drain contactor, forming a source terminal connected to the source contactor, forming a first gate terminal connected to the first gate region and the second drain contactor, and forming a second gate terminal connected to the second gate region.