US 2022/0020877 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes an output-stage element and a detection element, each of the output-stage element and the detection element including: a channel-formation region deposited at an upper part of a drift region; a main electrode region deposited at an upper part of the channel-formation region; and a gate electrode buried via a gate insulating film in one or more first trenches in contact with the main electrode region, the channel-formation region, and the drift region, wherein the first trenches used in common with the detection element and the output-stage element extend in a planar pattern, and a plurality of second trenches extending in parallel to each other in a direction perpendicular to the first trenches interpose the detection element so as to separate the channel-formation region of the output-stage element and the channel-formation region of the detection element from each other.

Claims19

Dependent claims

A semiconductor device comprising an output-stage element and a detection element that detects a current of the output-stage element,

each of the output-stage element and the detection element comprising:
a drift region of a first conductivity-type;
a channel-formation region of a second conductivity-type deposited at an upper part of the drift region;
a main electrode region of the first conductivity-type deposited at an upper part of the channel-formation region;
and
a gate electrode buried via a gate insulating film in one or more first trenches in contact with the main electrode region, the channel-formation region, and the drift region,
wherein the first trenches used in common with the detection element and the output-stage element extend in parallel to each other in a planar pattern, and
a plurality of second trenches extending in parallel to each other in a direction perpendicular to the first trenches interpose the detection element in the planar pattern so as to separate the channel-formation region of the output-stage element and the channel-formation region of the detection element from each other.

5 more elements

A semiconductor device comprising an output-stage element and a detection element that detects a current of the output-stage element,

each of the output-stage element and the detection element comprising:
a drift region of a first conductivity-type;
a channel-formation region of a second conductivity-type deposited at an upper part of the drift region;
a main electrode region of the first conductivity-type deposited at an upper part of the channel-formation region;
and
a gate electrode buried via a gate insulating film in one or more first trenches in contact with the main electrode region, the channel-formation region, and the drift region,
wherein the first trenches used in common with the detection element and the output-stage element extend in parallel to each other in a planar pattern,
at least one second trench extending in a direction perpendicular to the first trenches separates the channel-formation region of the output-stage element and the channel-formation region of the detection element from each other in the planar pattern, and
the output-stage element is located only on one side of the detection element in a longitudinal direction of the first trenches.

6 more elements

A semiconductor device comprising an output-stage element and a detection element that detects a current of the output-stage element,

each of the output-stage element and the detection element comprising:
a drift region of a first conductivity-type;
a channel-formation region of a second conductivity-type deposited at an upper part of the drift region;
a main electrode region of the first conductivity-type deposited at an upper part of the channel-formation region;
and
a gate electrode buried via a gate insulating film in one or more first trenches in contact with the main electrode region, the channel-formation region, and the drift region,
wherein the first trenches used in common with the detection element and the output-stage element extend in parallel to each other in a planar pattern,
at least one second trench extending in a direction perpendicular to the first trenches separates the channel-formation region of the output-stage element and the channel-formation region of the detection element from each other in the planar pattern,
the channel-formation region of the detection element is arranged such that an end part on a side opposite to a side separated from the channel-formation region of the output-stage element by the second trench is in contact with a first electric field relaxation region of the second conductivity-type having a depth greater than the first trenches, and
the channel-formation region of the output-stage element is in contact with a second electric field relaxation region of the second conductivity-type in a longitudinal direction of the first trenches, the second electric field relaxation region being separated from the first electric field relaxation region and having a depth greater than the first trenches.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims19