Semiconductor device

A semiconductor device, comprising:

• a first active fin that protrudes in a vertical direction from a top surface of a substrate;
• a first source drain pattern on the first active fin;
• an interlayer dielectric layer that is on the substrate and covers the first source/drain pattern;
• and
• a first contact pattern in the interlayer dielectric layer and in contact with the first source/drain pattern,
• wherein the first contact pattern includes:
• a first metal pattern;
• a first barrier pattern between the first metal pattern and the first source/drain pattern;
• a second barrier pattern between the first barrier pattern and the first metal pattern;
• and
• a separation dielectric pattern an the substrate on a side of the first active fin,
• wherein the second barrier pattern is arranged along sidewalls of the first metal pattern,
• wherein a portion of the second barrier pattern is exposed by the first barrier pattern,
• wherein the first contact pattern further includes an interfacial pattern between the first source/drain pattern and the second barrier pattern, and
• wherein the interfacial pattern includes a semiconductor material and a metallic material.

A semiconductor device, comprising:

• a first active fin and a second active fin that protrude in a vertical direction from a top surface of a substrate, respectively;
• a first source/drain pattern on the first active fin;
• a second source/drain pattern on the second active fin;
• a separation dielectric pattern on the substrate between the first source drain pattern and the second source/drain pattern;
• a plurality of first active patterns that are spaced apart from each other in the vertical direction on the first active fin;
• a plurality of second active patterns that are spaced apart from each other in the vertical direction on the second active fin;
• and
• a first contact pattern on the first source/drain pattern,
• wherein the first contact pattern includes:
• a first metal pattern;
• a first barrier pattern between the first metal pattern and the first source/drain pattern;
• and
• a second barrier pattern between the first barrier pattern and the first source/drain pattern,
• wherein the first barrier pattern contacts the separation dielectric pattern and extends along a sidewall of the first metal pattern adjacent to the separation dielectric pattern.