Gate contact interlayer for hemt devices with self-aligned electrodes
AssigneeSemiconductor Components Industries, LLC
InventorsAurore CONSTANT, Peter COPPENS
Life of this patent
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Abstract
A HEMT is described in which a gate contact interlayer is included between a surface dielectric and a gate contact. Further, source, drain, and gate contacts may be self-aligned and formed using a single or same metal and metallization process. A gate may be formed in contact with, and covering a portion of, a barrier layer of the HEMT, with a gate contact formed in contact with the gate. The gate contact interlayer may be formed between a surface dielectric formed on the barrier layer and at least a portion of the gate contact.
Claims20
A High Electron Mobility Transistor (HEMT), comprising:
- a source region;
- a source contact connected to the source region;
- a drain region;
- a drain contact connected to the drain region;
- a channel layer extending between the source region and the drain region;
- a barrier layer formed in contact with the channel layer, and extending between the source region and the drain region;
- a gate formed in contact with, and covering at least a portion of, the barrier layer;
- a gate contact connected to the gate;
- a surface dielectric formed on the barrier layer, between the source contact and the gate contact, and between the drain contact and the gate contact;
- and
- a gate contact interlayer disposed between the surface dielectric and at least a portion of the gate contact.
A gate structure for a High Electron Mobility Transistor (HEMT) device, comprising:
- a gate formed in contact with, and covering a portion of, a barrier layer of the HEMT;
- a gate contact formed in contact with the gate;
- and
- a gate contact interlayer formed between a surface dielectric formed on the barrier layer and at least a portion of the gate contact.
A method of making a High Electron Mobility Transistor (HEMT), comprising:
- forming a layer stack that includes at least a channel layer and a barrier layer adjacent to the channel layer and forming a heterojunction at which a current channel is defined in the channel layer between a source region and a drain region of the HEMT;
- forming a gate on the barrier layer;
- forming a surface dielectric on a portion of the gate, and on the barrier layer;
- forming a contact interlayer on the surface dielectric;
- etching the surface dielectric to provide contact openings therein;
- etching the contact interlayer to form a gate contact interlayer disposed on the surface dielectric;
- and
- forming, in the contact openings, a source contact in contact with the source region, a drain contact in contact with the drain region, and a gate contact in contact with the gate and having at least a portion disposed on the gate contact interlayer.
Dependencies are inferred from the claim text.