Back to results
US 2022/0020845 A1Published application
Semiconductor device having supporter pattern
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung Jin KIM, Sung Soo YIM
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes sequentially stacking a mold layer and a supporter layer on a substrate, forming a plurality of capacitor holes passing through the mold layer and supporter layer, forming a plurality of lower electrodes filling the capacitor holes, forming a supporter mask pattern having a plurality of mask holes on the supporter layer and the lower electrodes, and forming a plurality of supporter holes by patterning the supporter layer. Each of the plurality of lower electrodes has a pillar shape, and each of the mask holes is between four adjacent lower electrodes and has a circular shape.
Claims20
A semiconductor device comprising:
- a substrate;
- a plurality of lower electrodes disposed over the substrate, the plurality of lower electrodes including a plurality of first lower electrodes and a plurality of second lower electrodes that are respectively arranged in a first direction and alternately arranged in a second direction that is perpendicular to the first direction, each of the plurality of second lower electrodes being offset from each of the plurality of first lower electrodes with respect to the second direction;
- a supporter structure contacting the plurality of lower electrodes;
- a plurality of supporter holes disposed in the supporter structure and arranged in the first direction and in the second direction;
- a dielectric layer disposed on the plurality of lower electrodes;
- and
- an upper electrode disposed on the dielectric layer,
- wherein one of the plurality of supporter holes exposes two of the plurality of first lower electrodes and exposes two of the plurality of second lower electrodes among the plurality of lower electrodes, and
- an area of a side surface of at least one of the two of the plurality of first lower electrodes that are exposed by the one of the plurality of supporter holes is greater than an area of a side surface of at least one of the two of the plurality of second lower electrodes that are exposed by the one of the plurality of supporter holes.
6 more elements
A semiconductor device comprising:
- a substrate;
- a plurality of lower electrodes disposed over the substrate, the plurality of lower electrodes including a plurality of first lower electrodes and a plurality of second lower electrodes that are respectively arranged in a first direction and alternately arranged in a second direction that is perpendicular to the first direction, each of the plurality of lower electrodes is cylinder-shaped with a recess portion;
- a supporter structure contacting the plurality of lower electrodes;
- a plurality of supporter holes disposed in the supporter structure and arranged in the first direction and in the second direction;
- a dielectric layer disposed on a side surface and on the recess portion of each of the plurality of lower electrodes;
- and
- an upper electrode disposed on the dielectric layer and filling in the recess portion of each of the plurality of lower electrodes,
- wherein each of the plurality of second lower electrodes is offset from each of the plurality of first lower electrodes with respect to the second direction,
- one of the plurality of supporter holes exposes two of the plurality of first lower electrodes and exposes two of the plurality of second lower electrodes among the plurality of lower electrodes,
- a width of the one of the plurality of supporter holes in the first direction is less than a width of the one of the plurality of supporter holes in the second direction, the plurality of supporter holes are offset from one another with respect to the first direction and with respect to the second direction, and
- an area of a side surface of at least one of the two of the plurality of first lower electrodes that are exposed by the one of the plurality of supporter holes is greater than an area of a side surface of at least one of the two of the plurality of second lower electrodes that are exposed by the one of the plurality of supporter holes.
8 more elements
A semiconductor device comprising:
- a substrate;
- a plurality of lower electrodes disposed over the substrate, the plurality of lower electrodes including a plurality of first lower electrodes and a plurality of second lower electrodes that are respectively arranged in a first direction and alternately arranged in a second direction that is perpendicular to the first direction, each of the plurality of lower electrodes is pillar-shaped;
- a supporter structure contacting the plurality of lower electrodes;
- a plurality of supporter holes disposed in the supporter structure and arranged in the first direction and in the second direction;
- a dielectric layer disposed on a side surface and on a top surface of each of the plurality of lower electrodes;
- and
- an upper electrode disposed on the dielectric layer,
- wherein each of the plurality of second lower electrodes is offset from each of the plurality of first lower electrodes with respect to the second direction,
- one of the plurality of supporter holes exposes two of the plurality of first lower electrodes and exposes two of the plurality of second lower electrodes among the plurality of lower electrodes,
- a width of the one of the plurality of supporter holes in the first direction is less than a width of the one of the plurality of supporter holes in the second direction,
- the plurality of supporter holes are offset from one another with respect to the first direction and with respect to the second direction, and
- an area of a side surface of at least one of the two of the plurality of first lower electrodes that are exposed by the one of the plurality of supporter holes is greater than an area of a side surface of at least one of the two of the plurality of second lower electrodes that are exposed by the one of the plurality of supporter holes.
9 more elements
Dependencies are inferred from the claim text.