Three-Dimensional Memory Device and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng-Cheng Yang, Meng-Han Lin, Sheng-Chen Wang, Han-Jong Chia, Chung-Te Lin
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Abstract
In accordance with embodiments, a memory array is formed with a multiple patterning process. In embodiments a first trench is formed within a multiple layer stack and a first conductive material is deposited into the first trench. After the depositing the first conductive material, a second trench is formed within the multiple layer stack, and a second conductive material is deposited into the second trench. The first conductive material and the second conductive material are etched.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- etching a first trench in a multilayer stack, the multilayer stack comprising alternating dielectric layers and sacrificial layers;
- depositing a first conductive material to fill the first trench;
- after the depositing the first conductive material, etching a second trench in the multilayer stack;
- depositing a second conductive material to fill the second trench;
- and
- etching the first conductive material and the second conductive material.
A method of manufacturing a semiconductor device, the method comprising:
- forming an alternating stack of first dielectric materials and sacrificial materials;
- forming a first portion of a first word line within the alternating stack of first dielectric materials and sacrificial materials, the forming the first portion of the first word line comprising:
- etching a first trench in the alternating stack of first dielectric materials and sacrificial materials;
- forming first recesses by recessing portions of the sacrificial material exposed within the first trench;
- and
- depositing a first conductive material into the first recesses to fill the first trench;
- and
- forming a second portion of the first word line within the alternating stack of first dielectric materials and sacrificial materials after the forming the first portion of the first word line, the forming the second portion of the first word line comprising:
- etching a second trench in the alternating stack of first dielectric materials and sacrificial materials;
- forming second recesses by removing a remainder of the sacrificial material;
- and
- depositing a second conductive material into the second recesses to fill the second trench.
A semiconductor device comprising:
- a ferroelectric material extending away from a substrate;
- a channel material located on a first side of the ferroelectric material;
- a first dielectric material extending away from a second side of the ferroelectric material opposite the first side;
- a second dielectric material extending away from the second side of the ferroelectric material;
- a first conductive material extending away from the second side of the ferroelectric material between the first dielectric material and the second dielectric material, the first conductive material comprising a first bulk material and a first seed layer;
- and
- a second conductive material extending away from the first conductive material between the first dielectric material and the second dielectric material, the second conductive material comprising a second bulk material and a second seed layer, the second seed layer being in physical contact with the first seed layer, the second conductive material having a larger width than the first conductive material.
Dependencies are inferred from the claim text.