Semiconductor memory device and production method thereof

A semiconductor memory device comprising:

• a plurality of first conductive films laminated in a first direction and having a first region, a second region, and a third region in order in a second direction crossing the first direction, wherein
• the plurality of first conductive films is divided into a plurality of first film laminates in a third direction crossing the first direction and the second direction in the first region by one or more insulating films,
• the plurality of first film laminates is respectively penetrated by a columnar body which extends in the first direction and includes a semiconductor film,
• the plurality of first conductive films is divided into a plurality of second film laminates in the third direction in the third region by one or more insulating films.