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US 2022/0020757 A1Published application
Semiconductor storage device and neural network device
AssigneeSony Group Corporation
InventorTOSHIYUKI KOBAYASHI
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Abstract
A semiconductor storage device according to one embodiment of the present disclosure includes: a substrate; a first storage element formed on the substrate and including a first insulating film; and a second storage element formed on the substrate and including a second insulating film having a film thickness of equal to or greater than 0.5 times and equal to or less than 2 times a film thickness of the first insulating film, the second storage element differing from the first storage element in power consumption at a time of writing.
Claims20
A semiconductor storage device comprising:
- a substrate;
- a first storage element formed on the substrate and including a first insulating film;
- and
- a second storage element formed on the substrate and including a second insulating film having a film thickness of equal to or greater than 0.5 times and equal to or less than 2 times a film thickness of the first insulating film, the second storage element differing from the first storage element in power consumption at a time of writing.
1 more element
A neural network device comprising:
- a substrate;
- a first storage element formed on the substrate and including a first insulating film, the first storage element functioning as a buffer memory that temporarily stores a multiply-accumulate operation result;
- and
- a second storage element formed on the substrate and including a second insulating film having a film thickness of equal to or greater than 0.5 times and equal to or less than 2 times a film thickness of the first insulating film, the second storage element differing from the first storage element in power consumption at a time of writing and functioning as an analog multiplier-accumulator.
1 more element
Dependencies are inferred from the claim text.