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US 2022/0020711 A1Published application
Semiconductor device including uneven contact in passivation layer and method of manufacturing the same
AssigneeWinbond Electronics Corp.
InventorsYen-Jui Chu, Jin-Neng Wu
Life of this patent
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Abstract
Provided is a semiconductor device including a substrate, a passivation layer, and a connector. The passivation layer is disposed on the substrate. The connector is embedded in the passivation. An interface of the connector in contact with the passivation layer is uneven, thereby improving the structural stability of the connector. A method of manufacturing the semiconductor is also provided.
Claims20
A semiconductor device, comprising:
- a passivation layer, disposed on a substrate;
- and
- a connector, embedded in the passivation layer, wherein an interface of the connector contact with the passivation layer is uneven.
A method of manufacturing a semiconductor device, comprising:
- providing a substrate;
- forming a passivation layer on the substrate by a first 3D printing technology, wherein the passivation layer has an opening with an uneven sidewall, wherein the opening is formed by the first 3D printing technology, and there is no etching process performed during the opening is formed;
- and
- forming a connector in the opening by a second 3D printing technology.
1 more element
Dependencies are inferred from the claim text.