Semiconductor device and metal-oxide-semiconductor capacitor structure
AssigneeRealtek Semiconductor Corp.
InventorsHsiao-Tsung Yen, Ka-Un Chan
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Abstract
A semiconductor device is disposed below an inductor. The semiconductor device includes a metal-oxide-semiconductor capacitor structure and a patterned shielding structure. The metal-oxide-semiconductor capacitor structure includes a polysilicon layer, an oxide definition layer, and a first metal layer. The first metal layer is connected to the polysilicon layer and the oxide definition layer. The patterned shielding structure is disposed over the metal-oxide-semiconductor capacitor structure and includes a second metal layer.
Claims18
A semiconductor device disposed below an inductor, wherein the semiconductor device comprises:
- a metal-oxide-semiconductor capacitor (MOSCAP) structure comprising:
- a polysilicon layer;
- an oxide definition layer;
- and
- a first metal layer connected to the polysilicon layer and the oxide definition layer;
- and
- a patterned shielding structure disposed over the MOSCAP structure and comprises a second metal layer.
A MOSCAP structure disposed below a patterned shielding structure, wherein the MOSCAP structure comprises:
- a polysilicon layer;
- an oxide definition layer;
- and
- a first metal layer connected to the polysilicon layer through a first connection via and connected to the oxide definition layer through a second connection via, wherein the patterned shielding structure comprises a second metal layer, and the first metal layer is connected to the second metal layer through a third connection via.
Dependencies are inferred from the claim text.