Semiconductor device and method of manufacturing the semiconductor device

A semiconductor device, comprising:

• a substrate having a first region and a second region;
• a circuit pattern in the first region of the substrate;
• a through electrode structure penetrating through at least a portion of the second region of the substrate;
• a first isolation structure in a first trench, the first isolation structure extending in one direction in the substrate and defining the first region, the first isolation structure including a first oxide layer pattern and a first nitride layer pattern sequentially stacked on an inner surface of the first trench, the first nitride layer pattern filling the first trench;
• and
• an insulation interlayer on the substrate and covering the circuit pattern.

A semiconductor device, comprising:

• a substrate having a circuit region, a via region, and a buffer region between the circuit region and the via region;
• a circuit pattern in the circuit region of the substrate;
• a through electrode structure penetrating at least a portion of the via region of the substrate;
• a device isolation structure in a first trench extending in one direction in the substrate, the device isolation structure defining the circuit region, and including a first oxide layer pattern on an inner surface of the first trench and a first nitride layer pattern on the first oxide layer, the first nitride layer pattern filling a remaining portion of the first trench;
• at least one dummy isolation structure in at least one second trench extending in one direction in the substrate, the at least one dummy isolation structure in the buffer region, the at least one dummy isolation structure including a second oxide layer pattern on an inner surface of the second trench and a second nitride layer pattern on the second oxide layer pattern, the second nitride layer filling a remaining portion of the second trench;
• and
• an insulation interlayer on the substrate and covering the circuit pattern,
• wherein the first trench is spaced apart from the through electrode structure by a distance of between 5 μm to 15 μm.