Semiconductor device and method for forming the same

A semiconductor device, comprising:

• a substrate having a P-type well region and an N-type well region adjacent to the P-type well region, wherein the P-type well region and the N-type well region extend form a frontside surface of the substrate into the substrate;
• a first semiconductor fin disposed on the P-type well region;
• a second semiconductor fin disposed on the N-type well region;
• a first through substrate via (TSV) extending from a backside surface of the substrate to the P-type well region;
• and
• a second TSV extending from the backside surface of the substrate to the N-type well region.

A method for forming a semiconductor device, comprising:

• forming a well region extending from a frontside surface of a substrate into the substrate;
• forming a semiconductor fin on the well region;
• forming a source/drain structure on the semiconductor fin;
• etching a trench in the well region;
• forming a buried power line in the trench of the well region;
• forming a source/drain contact electrically connecting the source/drain structure to the buried power line;
• performing an etching process on a backside surface of the substrate to form a plurality of openings that expose the buried power line and the well region;
• and
• filling the plurality of openings with a conductive material to form a plurality of through silicon vias.