Processing tape and method of fabricating a semiconductor device using the same

A method of fabricating a semiconductor device, comprising:

• preparing a processing tape including an adhesive layer, a first release layer, and a protection release film stacked on a base layer;
• removing the protection release film while leaving at least a portion of the first release layer, which is used as a first release film, on the adhesive layer;
• attaching a substrate structure to the first release film;
• performing a processing process on the substrate structure to form a processed substrate structure;
• and
• detaching the processed substrate structure from the first release film,
• wherein the first release film is non-photo-curable.

A processing tape, comprising:

• a base layer including a polymer;
• a pressure sensing adhesive layer disposed on the base layer;
• a protection release film on the pressure sensing adhesive layer;
• a first release layer interposed between the pressure sensing adhesive layer and the protection release film;
• and
• a second release layer interposed between the first release layer and the protection release film, the second release layer comprising silicone acrylate,
• wherein the first release layer is non-photo-curable,
• the pressure sensing adhesive layer comprises a photo-curable material,
• the first release layer is 0.01 phr to 30 phr of the pressure sensing adhesive layer,
• a thickness of the first release layer ranges from 0.01 μm to 10 μm, and
• the first release layer comprising a material represented by Chemical Formula 1,
• where R1 and R2 each independently includes one selected from a hydrogen, an alkyl group having 1 to 5 carbon atoms, an alkyl substituted silyl group having 1 to 5 carbon atoms, —NH2, an amino alkyl group having 1 to 5 carbon atoms, an alkyl amino group having 1 to 5 carbon atoms, a hydroxyl group (—OH), a hydroxy alkyl group having 1 to 5 carbon atoms, an isocyanate group (NCO), an alkyl group having 1 to 5 carbon atoms substituted with isocyanate, and an alkyl group having 1 to 5 carbon atoms substituted with epoxy group, R3 each independently includes one selected from an alkyl group having 1 to 3 carbon atoms, and n is 1 to 410.