Plasma processing apparatus and plasma processing method
AssigneesTokyo Electron Limited, Tohoku University
InventorMasaki HIRAYAMA
Life of this patent
Estimating the term…
Loading patent…
AssigneesTokyo Electron Limited, Tohoku University
InventorMasaki HIRAYAMA
Estimating the term…
There is provided a technique capable of improving plasma uniformity in a parallel plate-type plasma processing apparatus having a plasma excitation frequency of a VHF band or an UHF band. A plasma processing apparatus according to an exemplary embodiment includes a process container, a stage provided in the process container, a dielectric plate provided above the upper surface of the stage via a space in the process container, and an upper electrode provided above the dielectric plate. An gap is provided between the upper electrode and the dielectric plate, and the width of the gap is non-uniform in a direction in which the dielectric plate extends.
A plasma processing apparatus comprising:
A plasma processing method for preforming plasma processing on an object to be processed, by using a plasma processing apparatus including a process container, an upper electrode, a dielectric plate, a waveguide, and a stage, wherein the stage is provided in the process container, the dielectric plate is provided above the stage via a space in the process container, the upper electrode is provided above the dielectric plate, the waveguide guides a high frequency of a VHF band or an UHF band used for plasma processing, and an end portion of the waveguide is located toward the space and radiates the high frequency into the space, the method comprising:
Dependencies are inferred from the claim text.