Tunable extraction assembly for wide angle ion beam
AssigneeApplied Materials, Inc.
InventorsJay R. Wallace, Costel Biloiu, Kevin M. Daniels
Life of this patent
Estimating the term…
Abstract
An ion beam processing system including a plasma chamber, a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture, a beam blocker, disposed within the plasma chamber and facing the extraction aperture, a blocker electrode, disposed on a surface of the beam blocker outside of the plasma chamber, and an extraction electrode disposed on a surface of the plasma plate outside of the plasma chamber.
Claims20
An ion beam processing system comprising:
- a plasma chamber;
- a plasma plate, disposed alongside the plasma chamber, the plasma plate defining an extraction aperture;
- a beam blocker, disposed within the plasma chamber and facing the extraction aperture;
- a blocker electrode, disposed on a surface of the beam blocker outside of the plasma chamber;
- and
- an extraction electrode disposed on a surface of the plasma plate outside of the plasma chamber.
An ion beam processing system comprising:
- a plasma chamber;
- a plasma plate formed of an electrically insulating material, disposed alongside the plasma chamber, the plasma plate defining an extraction aperture;
- a beam blocker formed of an electrically insulating material, disposed within the plasma chamber and facing the extraction aperture;
- a blocker electrode formed of an electrically conductive material and covered by a first dielectric coating, disposed on a surface of the beam blocker outside of the plasma chamber, wherein the blocker electrode is planar and has a thickness measured in a direction perpendicular to a front surface of the beam blocker, wherein the thickness of the blocker electrode is less than 1 millimeter;
- an extraction electrode formed of an electrically conductive material and covered by a first dielectric coating, disposed on a surface of the plasma plate outside of the plasma chamber, wherein the extraction electrode is planar and has a thickness measured in a direction perpendicular to a front surface of the plasma plate, wherein the thickness of the extraction electrode is less than 1 millimeter;
- and
- a pulsed voltage supply electrically coupled to the plasma chamber and the extraction electrode to generate a bias voltage between the extraction electrode and the plasma chamber.
A method of manufacturing a plasma plate assembly of an ion beam processing system, the method comprising:
- providing a plasma plate formed of an electrically insulating material, the plasma plate defining an elongated extraction aperture;
- applying an electrically conductive material to a front surface of the plasma plate surrounding the extraction aperture to form an extraction electrode, the extraction electrode being planar and having a thickness of less than 1 millimeter measured in a direction perpendicular to the front surface of the plasma plate;
- and
- applying a dielectric coating to the plasma plate and the extraction electrode, the dielectric coating covering the front surface of the plasma plate and the extraction electrode.
A method of manufacturing a blocker assembly of an ion beam processing system, the method comprising:
- providing a beam blocker formed of an electrically insulating material;
- applying an electrically conductive material to a front surface of the beam blocker to form a blocker electrode, the blocker electrode being planar and having a thickness of less than 1 millimeter measured in a direction perpendicular to the front surface of the beam blocker;
- and
- applying a dielectric coating to the beam blocker and the blocker electrode, the dielectric coating covering the front surface of the beam blocker and the blocker electrode.
Dependencies are inferred from the claim text.