Ion-sensitive field effect transistor

An ISFET or ISFET-based sensor, comprising

• a source terminal, a drain terminal and a transistor channel between the source terminal and the drain terminal;
• a fin extending between the source terminal and the drain terminal, the fin including the transistor channel, the fin having opposite sides with a charge-sensitive surface for forming an interface with an analyte solution and an insulating barrier between the charge-sensitive surface and the transistor channel located centrally between the opposite sides of the fin;
• wherein the transistor channel has a length extending from the source terminal to the drain terminal, as well as a width and a height extending transversally to the length, the transistor channel having a height-to-width ratio of at least 10, a width in the range from 50 nm to 300 nm, a height in the range from 500 nm to 10 μm and a length in the range from 5 μm to 30 μm.