Mask, method for fabricating mask and drive-backplane motherboard
AssigneesChengdu Boe Optoelectronics Technology Co., Ltd., Boe Technology Group Co., Ltd.
InventorsPeng Xu, Fengli Ji
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Abstract
Provided is a mask, including: a plurality of mask pattern regions, a transition region disposed between the plurality of mask pattern regions, and a mask marginal region surrounding the plurality of mask pattern regions and the transition region; wherein the transition region includes at least one first half-etched sub-region with a thickness less than a thickness of the mask marginal region.
Claims20
A mask, comprising a plurality of mask pattern regions, a transition region disposed between the plurality of mask pattern regions, and a mask marginal region surrounding the plurality of mask pattern regions and the transition region;
- wherein the transition region comprises at least one first half-etched sub-region with a thickness less than a thickness of the mask marginal region.
A method for fabricating a mask, wherein the method comprises:
- providing a mask substrate;
- and
- obtaining a mask by half-etching the mask substrate, wherein the mask comprises a plurality of mask pattern regions, a transition region disposed between the plurality of mask pattern regions, and a mask marginal region surrounding the plurality of mask pattern regions and the transition region, and the transition region comprises at least one first half-etched sub-region with a thickness less than a thickness of the mask marginal region.
A drive-backplane motherboard, which is fabricated by a mask comprising a plurality of mask pattern regions, a transition region disposed between the plurality of mask pattern regions, and a mask marginal region surrounding the plurality of mask pattern regions and the transition region;
- wherein the transition region comprises at least one first half-etched sub-region with a thickness less than a thickness of the mask marginal region.
Dependencies are inferred from the claim text.