Resistive random access memory device

A resistive random access memory (ReRAM) device comprising:

• a bottom electrode and a top electrode with a switching layer disposed therebetween;
• the bottom electrode having a top surface in contact with a bottom surface of the switching layer;
• the top electrode disposed over the switching layer;
• and
• one or more liners disposed over first and second sidewalls and a bottom surface of the bottom electrode, the one or more liners having first and second distal ends that are in contact with the bottom surface of the switching layer;
• wherein the one or more liners are each composed of a material that does not react with the switching layer when in contact with the switching layer.

A method of forming a ReRAM device comprising:

• patterning a bottom electrode trench into a semiconductor structure;
• filling the trench with the bottom electrode material;
• planarizing excess bottom electrode material to form a bottom electrode, the bottom electrode having first and second sidewalls that are separated at a top surface of the bottom electrode by a first distance;
• disposing an extended switching layer over the bottom electrode;
• disposing a top electrode layer over the extended switching layer;
• lithographically patterning the extended switching layer and the top electrode layer to form a switching layer and a top electrode, wherein:
• the switching layer includes first and second sidewalls spaced apart by a second distance that is larger than the first distance, and
• the switching layer is positioned over the bottom electrode such that the first sidewall of the switching layer overhangs the first sidewall of the bottom electrode by at least an overhang distance, and the second sidewall of the switching layer overhangs the second sidewall of the bottom electrode by at least the overhang distance.