Semiconductor device

Abstract

A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a metal oxide layer, a conductive layer, and an insulating region. The first insulating layer covers a top surface and a side surface of the semiconductor layer, and the conductive layer is positioned over the first insulating layer. The metal oxide layer is positioned between the first insulating layer and the conductive layer, and an end portion of the metal oxide layer is positioned on an inner side than an end portion of the conductive layer. The insulating region is positioned adjacent to the metal oxide layer and positioned between the first insulating layer and the conductive layer. Furthermore, the semiconductor layer includes a first region, a pair of second regions, and a pair of third regions. The first region overlaps with the metal oxide layer and the conductive layer. The second regions are positioned to put the first region sandwiched therebetween and to overlap with the insulating region and the conductive layer. The third regions are positioned to the first region and the pair of second regions sandwiched therebetween and not to overlap with the conductive layer. The third regions preferably include a portion having lower resistance than the first region. The second regions preferably include a portion having higher resistance than the third regions.

Dependencies are inferred from the claim text.