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US 2022/0013654 A1Published application
Bipolar transistor
AssigneesSTMicroelectronics (Crolles 2) SAS, STMicroelectronics S.r.l.
InventorsAlexis GAUTHIER, Pascal CHEVALIER
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Abstract
A bipolar transistor includes a collector. The collector is produced by a process wherein a first substantially homogeneously doped layer is formed at the bottom of a cavity. A second gradually doped layer is then formed by diffusion of dopants of the first substantially homogeneously doped layer.
Claims11
A bipolar transistor, comprising:
- a semiconductor substrate including a first cavity;
- a semiconductor material layer in the first cavity, wherein said semiconductor material layer is substantially homogeneously doped;
- an insulating material filling the first cavity to form an insulating trench over the semiconductor material layer;
- a semiconductor region within the semiconductor substrate that is gradually doped, said semiconductor region located under the semiconductor material layer and the first cavity and forming a first portion of a collector for the bipolar transistor;
- a second cavity extending through the insulating trench;
- and
- a semiconductor material fill in the second cavity forming a second portion of the collector for the bipolar transistor;
- wherein a bottom of the second portion of the collector is in physical contact with a top of the first portion of the collector.
5 more elements
Dependencies are inferred from the claim text.