Display device and manufacturing method thereof

A display device comprising:

• a substrate;
• a first semiconductor layer disposed on the substrate, wherein the first semiconductor layer includes a channel region and a doped region;
• a first gate electrode disposed to overlap the channel region of the first semiconductor layer;
• an intermediate film disposed on the first semiconductor layer and the first gate electrode;
• and
• a first electrode disposed on the intermediate film,
• wherein an opening is defined through the intermediate film to overlap the doped region of the first semiconductor layer,
• the doped region of the first semiconductor layer and the first electrode contact each other through the opening of the intermediate film,
• the first semiconductor layer includes an oxide semiconductor,
• the intermediate film includes a silicon nitride, and
• a width of the opening of the intermediate film is in a range of about 7 μm to about 9 μm.

A manufacturing method of a display device, the manufacturing method comprising:

• providing a first semiconductor layer and a second semiconductor layer on a substrate;
• providing a gate insulating film and a gate electrode on the first semiconductor layer and the second semiconductor layer, respectively;
• depositing an intermediate film and an insulating film over the first semiconductor layer, the second semiconductor layer, the gate insulating film and the gate electrode, and then etching the intermediate film and the insulating film to form an opening overlapping the first semiconductor layer and the second semiconductor layer, respectively;
• plasma-treating the opening;
• and
• providing a first electrode on the insulating film,
• wherein the first electrode contacts the first semiconductor layer through the opening, and
• an area of a cross-section of the opening parallel to the substrate is in a range of about 49 μm2 to about 81 μm2.