Sensors and electronic devices

A sensor, comprising:

• a near-infrared light sensor, the near-infrared light sensor including
• an anode and a cathode, each of the anode and the cathode including an oxide conductor, and
• a near-infrared photoelectric conversion layer between the anode and the cathode,
• wherein the near-infrared photoelectric conversion layer includes
• a p-type semiconductor, the p-type semiconductor being a near-infrared absorbing material having a maximum absorption wavelength in a near-infrared wavelength spectrum, and
• an n-type semiconductor, the n-type semiconductor including C60,
• a difference between a highest occupied molecular orbital (HOMO) energy level of the p-type semiconductor and a work function of the cathode is less than about 0.8 eV, and
• wherein a composition ratio of the p-type semiconductor relative to the n-type semiconductor is about 0.10 to about 0.50.