Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a semiconductor substrate;
• lower interconnection tiers disposed on the semiconductor substrate, the lower interconnection tiers comprising a first conductive pattern extending in a first direction on an interlayer dielectric;
• an active device tier disposed on the lower interconnection tiers, the active device tier comprising:
• a cell pillar, disposed on the first conductive pattern, the cell pillar comprising a semiconductor channel block disposed in between a pair of metallic blocks, and
• a gate pattern, extending in a second direction perpendicular to the first direction, laterally wrapping the cell pillar around the semiconductor channel block;
• and
• a magnetic junction tier, disposed over the active device tier and comprising a magnetic tunnel junction adapted to receive electric current flowing through the cell pillar,
• wherein the semiconductor channel block includes a semiconductor oxide material.

A manufacturing method of a semiconductor device, comprising:

• forming conductive patterns of lower interconnection tiers on a semiconductor substrate, wherein the lower interconnection tiers are stacked over each other on the semiconductor substrate;
• depositing a first metallic material on a first conductive pattern of the conductive patterns of the lower interconnection tiers to form a first metallic block, wherein the first conductive pattern extends in a first direction;
• depositing a semiconductor oxide on the first metallic block to form a semiconductor channel block;
• depositing a second metallic material on the semiconductor channel block to form a second metallic block;
• depositing a third metallic material over the lower interconnection tiers to form a gate pattern extending in a second direction perpendicular to the first direction, wherein the gate pattern encircles the semiconductor channel block;
• forming a conductive plate connected on one side to the second metallic block;
• and
• forming a magnetic tunnel junction connected to an opposite side of the conductive plate.