Oxide thin film transistor and method for driving the same, display device
AssigneesWuhan BOE Optoelectronics Technology Co., Ltd., Boe Technology Group Co., Ltd.
InventorsXibin SHAO, Yanping LIAO, Huibin GUO
Life of this patent
Estimating the term…
Loading patent…
AssigneesWuhan BOE Optoelectronics Technology Co., Ltd., Boe Technology Group Co., Ltd.
InventorsXibin SHAO, Yanping LIAO, Huibin GUO
Estimating the term…
An oxide thin film transistor includes a gate electrode, and a first active layer structure and a second active layer structure arranged subsequently, the first active layer structure includes a first conductive connection portion and a second conductive connection portion arranged oppositely, the second active layer structure includes a third conductive connection portion and a fourth conductive connection portion arranged oppositely, and the second oxide semiconductor pattern respectively coupled to the third conductive connection portion and the fourth conductive connection portion, and an orthographic projection of the first oxide semiconductor pattern on the substrate and an orthographic projection of the second oxide semiconductor pattern on the substrate are both located within an orthographic projection of the gate electrode on the substrate, the second conductive connection portion is coupled to the third conductive connection portion.
An oxide thin film transistor, comprising:
9-10. (canceled)
13-15. (canceled)
(canceled)
(canceled)
Dependencies are inferred from the claim text.