Semiconductor device and template
AssigneeKioxia Corporation
InventorKazuhiro TAKAHATA
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor substrate having a first surface; a device area that is formed on the semiconductor substrate and includes a semiconductor element; and a conductive member that surrounds the device area and extends in a first direction perpendicularly intersecting the first surface. The conductive member is formed on the semiconductor substrate, and includes a first pattern and a second pattern, the second pattern overlapping the first pattern in the first direction. A pitch of the first pattern in a second direction intersecting the first direction is different from a pitch of the second pattern in the second direction.
Claims20
A semiconductor device comprising:
- a semiconductor substrate having a first surface;
- a device area formed on the semiconductor substrate and including a semiconductor element;
- and
- a conductive member surrounding the device area and extending in a first direction perpendicularly intersecting the first surface,
- wherein the conductive member is formed on the semiconductor substrate, and includes a first pattern and a second pattern, the second pattern overlapping the first pattern in the first direction, and
- a pitch of the first pattern in a second direction intersecting the first direction is different from a pitch of the second pattern in the second direction.
A template comprising:
- a substrate;
- a first pattern disposed in a first area of the substrate;
- and
- a second pattern disposed at an outer periphery of the first area, and the second pattern includes a metal film formed on the substrate,
- wherein the second pattern includes a pattern surrounding the first area.
A semiconductor device comprising:
- a semiconductor substrate having a first surface;
- a device area formed on the semiconductor substrate and including a semiconductor element;
- and
- a conductive member surrounding the device area and extending in a first direction perpendicularly intersecting the first surface,
- wherein the conductive member is formed on the semiconductor substrate, and includes a first pattern and a second pattern, the second pattern overlapping the first pattern in the first direction, and
- wherein at least one of the first pattern or the second pattern is a Moire alignment mark.
Dependencies are inferred from the claim text.