Patterning method and structures resulting therefrom

A method of forming a semiconductor device, the method comprising:

• depositing a gate dielectric layer over a semiconductor substrate;
• depositing a first work function layer over the gate dielectric layer;
• depositing a first hard mask layer over the first work function layer, the first hard mask layer comprising aluminum oxide;
• depositing a bottom anti-reflective coating (BARC) layer over the first work function layer;
• patterning the BARC layer;
• etching a portion of the first hard mask layer and a portion of the first work function layer to expose a portion of the gate dielectric layer, wherein during the etching the BARC layer is used as a mask;
• and
• depositing a second work function layer over the exposed portion of the gate dielectric layer.

A method comprising:

• depositing a first work function layer over a semiconductor fin;
• depositing a first hard mask layer over the first work function layer, the first hard mask layer comprising a first material;
• forming a bottom anti-reflective coating (BARC) layer over the first hard mask layer;
• depositing a second hard mask layer over the BARC layer;
• performing an etching process that uses positive ions to remove portions of the BARC layer, wherein during the etching process the positive ions of the etching process experience a repulsive force from the first material;
• removing a portion of the first hard mask layer to expose a portion of the first work function layer;
• and
• removing the portion of the first work function layer through the first hard mask layer.