Temperature controlled substrate support assembly
AssigneeApplied Materials, Inc.
InventorsVijay D. PARKHE, Konstantin MAKHRATCHEV, Masanori ONO, Zhiqiang GUO
Life of this patent
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Abstract
Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heater assembly. The substrate support assembly comprises an upper surface and a lower surface; one or more main resistive heaters disposed in the substrate support; and a plurality of heaters in column with the main resistive heaters and disposed in the substrate support. A quantity of the heaters is an order of magnitude greater than a quantity of the main resistive heaters and the heaters are independently controllable relative to each other as well as the main resistive heater.
Claims20
An electrostatic chuck (ESC), comprising:
- a dielectric body formed from ceramic material, the dielectric body comprising:
- an upper surface and a lower surface,
- a chucking electrode disposed in the dielectric body,
- one or more main resistive heaters disposed in the dielectric body, and
- a plurality of secondary heaters in the dielectric body between the main resistive heaters and one of the upper surface and the lower surface, wherein a quantity of the secondary heaters is greater than a quantity of the main resistive heaters, each secondary heater coupled to a unique power circuit with the dielectric body, each power circuit configured to independently operate the connected secondary heater between an on state and an off state without changing the on state and off state of any of the other secondary heaters as well as the one or more main resistive heaters.
A substrate support assembly, comprising:
- a substrate support having a dielectric body, the dielectric body comprising:
- a substrate support surface and a lower surface;
- a main resistive heater coupled to or disposed in the dielectric body;
- and
- a plurality of resistive secondary heaters disposed in the dielectric body, each of the plurality of resistive secondary heaters is independently controllable relative to all other resistive secondary heaters and the main resistive heater, wherein the plurality of resistive secondary heaters are configured to be individually switched by a respective state switch to enable each combination of individual state switches to independently power each combination of resistive secondary heaters relative to a quantity of all other resistive secondary heaters, the quantity being greater than or equal to 2.
A processing chamber comprising:
- a chamber body;
- a controller;
- and
- a substrate support assembly, having an
- electrostatic chuck, the electrostatic chuck having a dielectric body formed of a single coherent mass of ceramic material, the dielectric body comprising:
- an upper surface and a lower surface,
- a chucking electrode disposed in the dielectric body,
- one or more main resistive heaters disposed in the dielectric body, and
- a plurality of secondary heaters in the dielectric body between the main resistive heaters and one of the upper surface and the lower surface, wherein a quantity of the secondary heaters is greater than a quantity of the main resistive heaters, each secondary heater coupled to a unique power circuit with the dielectric body, each power circuit configured to independently operate the connected secondary heater between an on state and an off state without changing the on state and off state of any of the other secondary heaters as well as the one or more main resistive heaters.
Dependencies are inferred from the claim text.