Resist underlayer surface modification

Abstract

Embodiments of the present invention are directed to resist underlayer surface modifications. In a non-limiting embodiment of the invention, a photoresist patterning stack includes a resist underlayer on a substrate. The resist underlayer includes a surface modification having one or more moieties. The moieties can include acid quencher moieties that limit acid diffusion during a post exposure bake. The acid quencher moieties can include a tert-butoxycarbonyl protecting group (tBOC)-blocked amine that can be copolymerized with an acid generating underlayer. The moieties can also include base-catalyzed crosslinking moieties selected such that base-catalyzed crosslinking can occur upon exposure to a predetermined developer. The base-catalyzed crosslinking moieties can include an acetal group and the predetermined developer can include tetramethylammonium hydroxide (TMAH).

Dependencies are inferred from the claim text.