Process for producing polycrystalline silicon

A method for producing polycrystalline silicon, comprising introducing a reaction gas containing hydrogen and silane and/or halosilane into a reaction space of a chemical vapour deposition reactor, wherein the reaction space comprises at least one heated support body on which elemental silicon is deposited by means of chemical vapour deposition to form the polycrystalline silicon, wherein, outside the reaction space at at least one position of at least one reactor component, vibrations of the reactor are measured using a measurement device and optionally recorded.

A reactor for the deposition of polycrystalline silicon, comprising, as reactor components, a base plate, a reactor shell arranged on the base plate, at least one conduit for gas supply, at least one conduit for gas removal, and electrode holders for at least one heatable support body, wherein at least one measurement device for determining vibrations of the reactor is mounted on one or more of the reactor components.