Semiconductor wafer treatment liquid containing hypochlorite ions and ph buffer
AssigneeTokuyama Corporation
InventorsTakafumi SHIMODA, Yuki KIKKAWA, Takayuki NEGISHI, Seiji TONO, Tomoaki SATO
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Abstract
The present invention provides a treatment liquid for treating a semiconductor wafer in a semiconductor formation process, the treatment liquid including: (A) hypochlorite ion; (B) a pH buffer; and (C) a tetraalkylammonium ion represented by the following formula (1): (wherein each of R1, R2, R3 and R4 is independently an alkyl group having carbon number from 1 to 20).
Claims20
A treatment liquid for treating a semiconductor wafer in a semiconductor formation process;
- the treatment liquid comprising:
- (A) hypochlorite ion;
- (B) a pH buffer;
- and
- (C) a tetraalkylammonium ion represented by the following formula (1):
- wherein each of R1, R2, R3 and R4 is independently an alkyl group having carbon number from 1 to 20, and
- wherein the pH buffer (B) has a concentration of from 0.0001 to 10 mass %.
(canceled)
An inhibitor for inhibiting the generation of a ruthenium-containing gas, the inhibitor comprising the following (B) and (C):
- (B) a pH buffer;
- and
- (C) a tetraalkylammonium ion represented by the following formula (1):
- wherein each of R1, R2, R3 and R4 is independently an alkyl group having carbon number from 1 to 20.
A treatment agent for treating a ruthenium-containing waste liquid, the treatment agent comprising the following (B) and (C):
- (B) a pH buffer;
- and
- (C) a tetraalkylammonium ion represented by the following formula (1):
- wherein each of R1, R2, R3 and R4 is independently an alkyl group having carbon number from 1 to 20.
Dependencies are inferred from the claim text.