Multi-layer raised frame in bulk acoustic wave device
AssigneeSkyworks Global Pte. Ltd.
InventorsKwang Jae Shin, Jiansong Liu
Life of this patent
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Abstract
Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.
Claims21
(canceled)
A multiplexer comprising:
- a first filter having a first passband, the first filter including a bulk acoustic wave resonator that includes first and second electrodes, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-layer raised frame structure including a first raised frame layer and a second raised frame layer, the first raised frame layer being positioned between a first electrode and the piezoelectric layer, the first raised frame layer having a lower acoustic impedance than the first electrode, and the second raised frame layer overlapping with the first raised frame layer;
- and
- a second filter having a second passband, the second filter coupled to the first filter at a common node, and the first raised frame layer configured to move a raised frame mode of the bulk acoustic wave resonator away from the second passband.
A wireless communication device comprising:
- a multiplexer including a first filter having a first passband and a second filter having a second passband, the second filter coupled to the first filter at a common node, and the first filter including a bulk acoustic wave resonator that includes first and second electrodes, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-layer raised frame structure including a first raised frame layer and a second raised frame layer overlapping with the first raised frame layer, the first raised frame layer being positioned between a first electrode and the piezoelectric layer, the first raised frame layer having a lower acoustic impedance than the first electrode, and the first raised frame layer configured to move a raised frame mode of the bulk acoustic wave resonator away from the second passband;
- and
- an antenna in operative communication with the multiplexer.
A bulk acoustic wave device comprising:
- a first electrode;
- a second electrode;
- a piezoelectric layer positioned between the first electrode and the second electrode;
- and
- a multi-layer raised frame structure including a first raised frame layer and a second raised frame layer, the first raised frame layer being positioned between the first electrode and the second electrode, the first raised frame layer having a lower acoustic impedance than the first electrode, the second raised frame layer having a higher acoustic impedance than the first raised frame layer, and the second raised frame layer overlapping with the first raised frame layer, the bulk acoustic wave device configured to generate a bulk acoustic wave.
Dependencies are inferred from the claim text.