High-implant channel semiconductor device and method for manufacturing the same

A method for manufacturing a Gilbert-cell mixer comprising:

• forming a Gilbert-cell mixer circuit including a plurality of transistors electrically connected to each other, comprising:
• forming one or more first fins extending in a first direction over a substrate,
• wherein the one or more first fins include a first region along the first direction and second regions on either side of the first region along the first direction,
• wherein the second regions are immediately laterally adjacent the first region;
• implanting a first dopant in an upper portion of the first region of the first fins and not in a lower portion of the first region of the first fins and not in upper and lower portions of the second regions that are immediately laterally adjacent the upper and lower portions of the first region,
• wherein the first dopant in the upper portion of the first region extends downward from an uppermost surface of the first fins to a distance of about 10 nm to 200 nm along a second direction corresponding to a height of the first fins perpendicular to the first direction;
• and
• implanting a second dopant into a second fin to form a buried-channel transistor with a doped channel region connected in parallel with at least one of the at least one upper-channel implant transistors.

A method for manufacturing a semiconductor device, comprising:

• forming one or more first fins extending in a first direction over a substrate,
• wherein the one or more first fins include a first region along the first direction and second regions on either side of the first region along the first direction,
• implanting a first dopant into a first portion of the first region of the first fins and the first portion is defined by the first dopant, the first portion extending from an uppermost surface of the first fins to a distance of about 10 nm to 200 nm along a second direction corresponding to a height of the fin perpendicular to the first direction,
• wherein the first dopant is not contained in a second portion of the first fins located at a greater distance along the second direction from the uppermost surface of the first fins than the first portion of the first fins and the first dopant is not contained in the second regions that are immediately laterally adjacent the first portion of the first fins, and
• wherein a concentration of the first dopant in the first portion of the first region ranges from 1.0×1012 to 1.0×1015 ions cm−3,
• forming source/drains on the second regions of the first fins;
• and
• implanting a second dopant in a second fin to form a doped channel region of a buried-channel transistor connected in parallel with the upper-channel implant transistor,
• wherein a concentration of the second dopant in the doped channel region ranges from 1.5×1016 to 2.0×1020 atoms cm−3, and the doped channel region is centered in a channel region in the second fin at 15 to 20 nm in the second direction from a top of the second fin and 3 to 7 nm in the third direction from a sidewall of the second fin.