Direct-current generator based on dynamic semiconductor heterojunction, and method for preparing same

A method for manufacturing a direct-current generator based on dynamic semiconductor heterojunction, wherein the direct-current generator comprises a first semiconductor layer (1) and a second semiconductor layer (4);

• a first electrode (2) is provided on a back surface of the first semiconductor layer (1) and an insulating layer (3) is provided on a front surface of the first semiconductor layer (1);
• a second electrode (5) is provided on a side of the second semiconductor layer (4);
• the front surface of the first semiconductor layer and a bare side of the second semiconductor layer contact each other and are slidable relative to each other to form a dynamic semiconductor heterojunction direct-current generator;
• and a Fermi level of a material of the first semiconductor layer (1) is different from a Fermi level of a material of the second semiconductor layer (4), wherein the method comprises steps of:
• 1) manufacturing the first electrode (2) on the back surface of the first semiconductor (1);
• 2) growing the insulating layer (3) on the front surface of the first semiconductor (1);
• 3) manufacturing the second electrode (5) on a back surface of the second semiconductor (4);
• and
• 4) pressing a front surface of the second semiconductor (4) onto the insulating layer (3) of the first semiconductor (1) to form a slidable contact, so as to obtain the direct-current generator based on dynamic semiconductor heterojunction;
• and moving the two semiconductor layers relative to each other to generate a direct-current electrical signal.