Magnetoresistive stack device fabrication methods
AssigneeEverspin Technologies, Inc.
InventorJijun SUN
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Abstract
A method of fabricating a magnetoresistive device may comprise forming an electrically conductive region and forming a first seed region on one side of the electrically conductive region. A surface of the first seed region may be treated by exposing the surface to a gas. A second seed region may be formed on the treated surface of the first seed region. The method may also comprise forming a magnetically fixed region on one side of the second seed region.
Claims20
A method of fabricating a magnetoresistive device, comprising:
- forming an electrically conductive region;
- forming a first seed region on one side of the electrically conductive region;
- treating a surface of the first seed region by exposing the surface to a gas;
- forming a second seed region on the treated surface of the first seed region;
- and
- forming a magnetically fixed region on one side of the second seed region.
A method of fabricating a magnetoresistive device, comprising:
- forming an electrically conductive region;
- forming a composition-adjusted seed region on one side of the electrically conductive region, wherein forming the composition-adjusted seed region comprises:
- depositing a first seed region;
- and
- adding a gas during the deposition of the first seed region;
- forming a magnetically fixed region on one side of the composition-adjusted seed region.
A method of fabricating a magnetoresistive device, comprising:
- forming an electrically conductive region;
- forming a composition-adjusted seed region on one side of the electrically conductive region, wherein forming the composition-adjusted seed region comprises:
- depositing a first seed region;
- and
- adding one or more atomic elements during the deposition of the first seed region;
- forming a magnetically fixed region on one side of the composition-adjusted seed region.
Dependencies are inferred from the claim text.